IndiumV3, Main, Repository, bibRecord, 000590

Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering : Solar Energy Generation and Energy Storage

Identifieur interne : 000590 ( Main/Repository ); précédent : 000589; suivant : 000591

Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering : Solar Energy Generation and Energy Storage

Auteurs : RBID : Pascal:13-0270083

Descripteurs français

Pascal (Inist)
- Température recuit, Microstructure, Propriété électrooptique, Addition étain, Dépôt pulvérisation, Caractéristique optique, Propriété optique, Couche ITO, Courant continu, Pulvérisation cathodique, Pulvérisation réactive, Température ambiante, Calcination, Diffraction RX, Spectromètre visible, Rayonnement UV, Microscopie force atomique, Morphologie surface, Structure surface, Photocatalyse, Polycristal, Oxyde d'indium, Verre sodocalcique, Céramique, Oxyde d'étain, Argon, Réseau cubique, Matériau poreux, Semiconducteur bande interdite large, Matériau dopé, Fabrication microélectronique, 6865, 7820J, 7867, 6837P, ITO, In2O3, SnO2, 8245J, 6146, 8105R, 8540H.
Wicri :
- concept : Céramique.

English descriptors

KwdEn :
- Annealing temperature, Argon, Atomic force microscopy, Calcining, Cathodic sputtering, Ceramic materials, Cubic lattices, Direct current, Doped materials, Electrooptical properties, ITO layers, Indium oxide, Microelectronic fabrication, Microstructure, Optical characteristic, Optical properties, Photocatalysis, Polycrystal, Porous material, Reactive sputtering, Room temperature, Soda-lime glasses, Sputter deposition, Surface morphology, Surface structure, Tin addition, Tin oxide, Ultraviolet radiation, Visible spectrometers, Wide band gap semiconductors, X ray diffraction.

Abstract

This study probes the effect of annealing temperature on electrical, optical and microstructural properties of indium tin oxide (ITO) films deposited onto soda lime glass substrates by conventional direct current (DC) magnetron reactive sputtering technique at 100 watt using an ITO ceramic target (In₂O₃:SnO₂, 90:10 wt%) in argon atmosphere at room temperature. The films obtained are exposed to the calcination process at different temperature up to 700 °C. X-ray diffractometer (XRD), ultra violet-visible spectrometer (UV-vis) and atomic force microscopy (AFM) measurements are performed to characterize the samples. Moreover, phase purity, surface morphology, optical and photocatalytic properties of the films are compared with each other. The results obtained show that all the properties depend strongly on the annealing temperature. XRD results indicate that all the samples produced contain the In₂O₃ phase only and exhibit the polycrystalline and cubic bixbite structure with more intensity of diffraction lines with increasing the annealing temperature until 400 °C; in fact the strongest intensity of (222) peak is obtained for the sample annealed at 400 °C, meaning that the sample has the greatest ratio I₂₂₂/I₄₀₀ and the maximum grain size (54 nm). As for the AFM results, the sample prepared at 400 °C has the best microstructure with the lower surface roughness. Additionally, the transmittance measurements illustrate that the amplitude of interference oscillation is in the range from 78 (for the film annealed at 400 °C) to 93 % (for the film annealed at 100 °C). The refractive index, packing density, porosity and optical band gap of the ITO thin films are also evaluated from the transmittance spectra. According to the results, the film annealed at 400 °C obtains the better optical properties due to the high refractive index while the film produced at 100 °C exhibits much better photoactivity than the other films as a result of the large optical energy band gap.

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<author><name sortKey="Oz, M" uniqKey="Oz M">M. Oz</name>
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<seriesStmt><idno type="ISSN">0957-4522</idno>
<title level="j" type="abbreviated">J. mater. sci., Mater. electron.</title>
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<term>Atomic force microscopy</term>
<term>Calcining</term>
<term>Cathodic sputtering</term>
<term>Ceramic materials</term>
<term>Cubic lattices</term>
<term>Direct current</term>
<term>Doped materials</term>
<term>Electrooptical properties</term>
<term>ITO layers</term>
<term>Indium oxide</term>
<term>Microelectronic fabrication</term>
<term>Microstructure</term>
<term>Optical characteristic</term>
<term>Optical properties</term>
<term>Photocatalysis</term>
<term>Polycrystal</term>
<term>Porous material</term>
<term>Reactive sputtering</term>
<term>Room temperature</term>
<term>Soda-lime glasses</term>
<term>Sputter deposition</term>
<term>Surface morphology</term>
<term>Surface structure</term>
<term>Tin addition</term>
<term>Tin oxide</term>
<term>Ultraviolet radiation</term>
<term>Visible spectrometers</term>
<term>Wide band gap semiconductors</term>
<term>X ray diffraction</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Température recuit</term>
<term>Microstructure</term>
<term>Propriété électrooptique</term>
<term>Addition étain</term>
<term>Dépôt pulvérisation</term>
<term>Caractéristique optique</term>
<term>Propriété optique</term>
<term>Couche ITO</term>
<term>Courant continu</term>
<term>Pulvérisation cathodique</term>
<term>Pulvérisation réactive</term>
<term>Température ambiante</term>
<term>Calcination</term>
<term>Diffraction RX</term>
<term>Spectromètre visible</term>
<term>Rayonnement UV</term>
<term>Microscopie force atomique</term>
<term>Morphologie surface</term>
<term>Structure surface</term>
<term>Photocatalyse</term>
<term>Polycristal</term>
<term>Oxyde d'indium</term>
<term>Verre sodocalcique</term>
<term>Céramique</term>
<term>Oxyde d'étain</term>
<term>Argon</term>
<term>Réseau cubique</term>
<term>Matériau poreux</term>
<term>Semiconducteur bande interdite large</term>
<term>Matériau dopé</term>
<term>Fabrication microélectronique</term>
<term>6865</term>
<term>7820J</term>
<term>7867</term>
<term>6837P</term>
<term>ITO</term>
<term>In2O3</term>
<term>SnO2</term>
<term>8245J</term>
<term>6146</term>
<term>8105R</term>
<term>8540H</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Céramique</term>
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<front><div type="abstract" xml:lang="en">This study probes the effect of annealing temperature on electrical, optical and microstructural properties of indium tin oxide (ITO) films deposited onto soda lime glass substrates by conventional direct current (DC) magnetron reactive sputtering technique at 100 watt using an ITO ceramic target (In<sub>2</sub>
O<sub>3</sub>
:SnO<sub>2</sub>
, 90:10 wt%) in argon atmosphere at room temperature. The films obtained are exposed to the calcination process at different temperature up to 700 °C. X-ray diffractometer (XRD), ultra violet-visible spectrometer (UV-vis) and atomic force microscopy (AFM) measurements are performed to characterize the samples. Moreover, phase purity, surface morphology, optical and photocatalytic properties of the films are compared with each other. The results obtained show that all the properties depend strongly on the annealing temperature. XRD results indicate that all the samples produced contain the In<sub>2</sub>
O<sub>3</sub>
 phase only and exhibit the polycrystalline and cubic bixbite structure with more intensity of diffraction lines with increasing the annealing temperature until 400 °C; in fact the strongest intensity of (222) peak is obtained for the sample annealed at 400 °C, meaning that the sample has the greatest ratio I<sub>222</sub>
/I<sub>400</sub>
 and the maximum grain size (54 nm). As for the AFM results, the sample prepared at 400 °C has the best microstructure with the lower surface roughness. Additionally, the transmittance measurements illustrate that the amplitude of interference oscillation is in the range from 78 (for the film annealed at 400 °C) to 93 % (for the film annealed at 100 °C). The refractive index, packing density, porosity and optical band gap of the ITO thin films are also evaluated from the transmittance spectra. According to the results, the film annealed at 400 °C obtains the better optical properties due to the high refractive index while the film produced at 100 °C exhibits much better photoactivity than the other films as a result of the large optical energy band gap.</div>
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<fC01 i1="01" l="ENG"><s0>This study probes the effect of annealing temperature on electrical, optical and microstructural properties of indium tin oxide (ITO) films deposited onto soda lime glass substrates by conventional direct current (DC) magnetron reactive sputtering technique at 100 watt using an ITO ceramic target (In<sub>2</sub>
O<sub>3</sub>
:SnO<sub>2</sub>
, 90:10 wt%) in argon atmosphere at room temperature. The films obtained are exposed to the calcination process at different temperature up to 700 °C. X-ray diffractometer (XRD), ultra violet-visible spectrometer (UV-vis) and atomic force microscopy (AFM) measurements are performed to characterize the samples. Moreover, phase purity, surface morphology, optical and photocatalytic properties of the films are compared with each other. The results obtained show that all the properties depend strongly on the annealing temperature. XRD results indicate that all the samples produced contain the In<sub>2</sub>
O<sub>3</sub>
 phase only and exhibit the polycrystalline and cubic bixbite structure with more intensity of diffraction lines with increasing the annealing temperature until 400 °C; in fact the strongest intensity of (222) peak is obtained for the sample annealed at 400 °C, meaning that the sample has the greatest ratio I<sub>222</sub>
/I<sub>400</sub>
 and the maximum grain size (54 nm). As for the AFM results, the sample prepared at 400 °C has the best microstructure with the lower surface roughness. Additionally, the transmittance measurements illustrate that the amplitude of interference oscillation is in the range from 78 (for the film annealed at 400 °C) to 93 % (for the film annealed at 100 °C). The refractive index, packing density, porosity and optical band gap of the ITO thin films are also evaluated from the transmittance spectra. According to the results, the film annealed at 400 °C obtains the better optical properties due to the high refractive index while the film produced at 100 °C exhibits much better photoactivity than the other films as a result of the large optical energy band gap.</s0>
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<s5>01</s5>
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<s5>01</s5>
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<fC03 i1="01" i2="X" l="SPA"><s0>Temperatura recocido</s0>
<s5>01</s5>
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<s5>02</s5>
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<fC03 i1="02" i2="X" l="ENG"><s0>Microstructure</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Microestructura</s0>
<s5>02</s5>
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<fC03 i1="03" i2="X" l="FRE"><s0>Propriété électrooptique</s0>
<s5>03</s5>
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<fC03 i1="03" i2="X" l="ENG"><s0>Electrooptical properties</s0>
<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Adición estaño</s0>
<s5>04</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Dépôt pulvérisation</s0>
<s5>05</s5>
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<fC03 i1="05" i2="3" l="ENG"><s0>Sputter deposition</s0>
<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<fC03 i1="06" i2="X" l="SPA"><s0>Característica óptica</s0>
<s5>06</s5>
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<fC03 i1="07" i2="X" l="FRE"><s0>Propriété optique</s0>
<s5>07</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<fC03 i1="08" i2="3" l="ENG"><s0>ITO layers</s0>
<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Cathodic sputtering</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Pulverización catódica</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Pulvérisation réactive</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Reactive sputtering</s0>
<s5>11</s5>
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<fC03 i1="11" i2="X" l="SPA"><s0>Pulverización reactiva</s0>
<s5>11</s5>
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<s5>12</s5>
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<s5>16</s5>
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<s5>16</s5>
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<s5>17</s5>
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<s5>17</s5>
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<s5>17</s5>
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<s5>18</s5>
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<s5>18</s5>
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<s5>19</s5>
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<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Estructura superficie</s0>
<s5>19</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Photocatalyse</s0>
<s5>20</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Photocatalysis</s0>
<s5>20</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Fotocatálisis</s0>
<s5>20</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Polycristal</s0>
<s5>21</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Polycrystal</s0>
<s5>21</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Policristal</s0>
<s5>21</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>22</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>22</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>22</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Verre sodocalcique</s0>
<s5>23</s5>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Soda-lime glasses</s0>
<s5>23</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Céramique</s0>
<s5>24</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Ceramic materials</s0>
<s5>24</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA"><s0>Cerámica</s0>
<s5>24</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>25</s5>
</fC03>
<fC03 i1="25" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>25</s5>
</fC03>
<fC03 i1="25" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>25</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>Argon</s0>
<s2>NC</s2>
<s5>26</s5>
</fC03>
<fC03 i1="26" i2="X" l="ENG"><s0>Argon</s0>
<s2>NC</s2>
<s5>26</s5>
</fC03>
<fC03 i1="26" i2="X" l="SPA"><s0>Argón</s0>
<s2>NC</s2>
<s5>26</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>Réseau cubique</s0>
<s5>27</s5>
</fC03>
<fC03 i1="27" i2="3" l="ENG"><s0>Cubic lattices</s0>
<s5>27</s5>
</fC03>
<fC03 i1="28" i2="X" l="FRE"><s0>Matériau poreux</s0>
<s5>28</s5>
</fC03>
<fC03 i1="28" i2="X" l="ENG"><s0>Porous material</s0>
<s5>28</s5>
</fC03>
<fC03 i1="28" i2="X" l="SPA"><s0>Material poroso</s0>
<s5>28</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0>
<s5>29</s5>
</fC03>
<fC03 i1="29" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0>
<s5>29</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>46</s5>
</fC03>
<fC03 i1="30" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>46</s5>
</fC03>
<fC03 i1="31" i2="X" l="FRE"><s0>Fabrication microélectronique</s0>
<s5>47</s5>
</fC03>
<fC03 i1="31" i2="X" l="ENG"><s0>Microelectronic fabrication</s0>
<s5>47</s5>
</fC03>
<fC03 i1="31" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0>
<s5>47</s5>
</fC03>
<fC03 i1="32" i2="X" l="FRE"><s0>6865</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="33" i2="X" l="FRE"><s0>7820J</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="34" i2="X" l="FRE"><s0>7867</s0>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="35" i2="X" l="FRE"><s0>6837P</s0>
<s4>INC</s4>
<s5>59</s5>
</fC03>
<fC03 i1="36" i2="X" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="37" i2="X" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="38" i2="X" l="FRE"><s0>SnO2</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="39" i2="X" l="FRE"><s0>8245J</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="40" i2="X" l="FRE"><s0>6146</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="41" i2="X" l="FRE"><s0>8105R</s0>
<s4>INC</s4>
<s5>87</s5>
</fC03>
<fC03 i1="42" i2="X" l="FRE"><s0>8540H</s0>
<s4>INC</s4>
<s5>88</s5>
</fC03>
<fN21><s1>259</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering : Solar Energy Generation and Energy Storage
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Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering : Solar Energy Generation and Energy Storage

Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering : Solar Energy Generation and Energy Storage

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